TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
AUGUST 1997 - REVISED DECEMBER 1999
TYPICAL CHARACTERISTICS
DISTRIBUTION LIMITS OF
DISTRIBUTION LIMITS OF
DIODE FORWARD VOLTAGE
THYRISTOR LIMITING VOLTAGE
vs
vs
TIME
TIME
AI6XAX
AI6XAW
6
5
4
3
2
1
0
0
-10
-20
-30
-40
-50
-60
-70
50 devices tested from 10 wafer lots
0.5/700 Waveform
IT = -20 A
TA = 25°C
VGG = -50 V
50 devices tested from 10 wafer lots
0.5/700 Waveform
IF = 20 A
TA = 25°C
VGG = -50 V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time - µs
Time - µs
Figure 7
Figure 8
DIODE FORWARD CURRENT
vs
CUMULATIVE POPULATION %
vs
PEAK LIMITING VOLTAGE
FORWARD VOLTAGE
TC6XAB
TC61AD
1
99·999
99·99
50 devices tested from 10 wafer lots
IF = 20 A, IT = -20 A, 0.5/700 Waveform
0.7
99·9
99
TA = 25°C, VGG = -50 V
0.4
0.2
85°C
90
25°C
-40°C
70
50
30
0.1
0.07
10
0.04
0.02
0.01
1
DIODE
VFRM
THYRISTOR
VGG - V(BO)
0·1
0·01
0·001
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
4
5
6
7
8
9
10
15
Peak Limiting Voltage - V
VF - Forward Voltage - V
Figure 9
Figure 10
P R O D U C T
I N F O R M A T I O N
7
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