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TISPPBL1D 参数 Datasheet PDF下载

TISPPBL1D图片预览
型号: TISPPBL1D
PDF下载: 下载PDF文件 查看货源
内容描述: 双正向导电的P- GATE闸流体爱立信元件SLIC组件 [DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS]
分类和应用: 电信集成电路光电二极管
文件页数/大小: 19 页 / 358 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
AUGUST 1997 - REVISED DECEMBER 1999
TYPICAL CHARACTERISTICS
CUMULATIVE POPULATION %
vs
LIMITING TIME
TC6XAC
99·999
99·99
99·9
Cumulative Population - %
99
90
70
50
30
10
1
0·1
0·01
DIODE t
FR
for V
F
> 5 V
Outliers
(2) @ 0 µs
50 devices tested from 10 wafer lots
I
F
= 20 A, I
T
= -20 A, 0.5/700 Waveform
T
A
= 25°C, V
GG
= -50 V
1.10
NORMALISED PEAK LIMITING VOLTAGES
vs
JUNCTION TEMPERATURE
TC6XAA
Normalised to 25°C values
of V
(BO)
and V
FRM
I
F
= 20 A, I
T
= -20 A
0.5/700 Waveform
V
GG
= -50 V
Normalised Peak Limiting Voltages
1.05
1.00
THYRISTOR
V
(BO)
0.95
THYRISTOR t
(BR)
for V
(BR)
< V
GG
DIODE
V
FRM
0·001
0.001
1
0.004 0.01
0.04 0.1
0.4
t
(BR)
, t
FR
- Breakdown and Forward Recovery Times - µs
0.90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
T
J
- Junction Temperature - °C
Figure 11
Figure 12
APPLICATIONS INFORMATION
operation of gated protectors
The following SLIC circuit definitions are used in this data sheet:
V
BAT
— Package pin label for the battery supply voltage.
V
Bat
— Voltage applied to the V
BAT
pin.
V
B
— Negative power supply voltage applied to the V
BAT
pin via an isolation diode. This voltage is also the
gate reference voltage, V
GG
, of the TISPPBLx. When the isolation diode, D1, is conducting, then
V
Bat
= V
B
+ 0.7.
The isolation diode, D1 in Figure 13, is to prevent a damaging current flowing into the SLIC substrate (V
BAT
pin) if the V
Bat
voltage becomes more negative than the V
B
supply during a negative overvoltage condition.
Each SLIC needs an isolation diode from the V
B
voltage supply.
negative overvoltages and the diode sections limit positive overvoltages.
Negative overvoltages (Figure 13) are initially clipped close to the SLIC negative supply rail value (V
B
) by the
conduction of the transistor base-emitter and the thyristor gate-cathode junctions. If sufficient current is
available from the overvoltage, then the thyristor will crowbar into a low voltage ground referenced on-state
condition. As the overvoltage subsides the high holding current of the crowbar thyristor prevents d.c. latchup.
PRODUCT
8
INFORMATION