欢迎访问ic37.com |
会员登录 免费注册
发布采购

TISPPBL1D 参数 Datasheet PDF下载

TISPPBL1D图片预览
型号: TISPPBL1D
PDF下载: 下载PDF文件 查看货源
内容描述: 双正向导电的P- GATE闸流体爱立信元件SLIC组件 [DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS]
分类和应用: 电信集成电路光电二极管
文件页数/大小: 19 页 / 358 K
品牌: POINN [ POWER INNOVATIONS LTD ]
 浏览型号TISPPBL1D的Datasheet PDF文件第6页浏览型号TISPPBL1D的Datasheet PDF文件第7页浏览型号TISPPBL1D的Datasheet PDF文件第8页浏览型号TISPPBL1D的Datasheet PDF文件第9页浏览型号TISPPBL1D的Datasheet PDF文件第11页浏览型号TISPPBL1D的Datasheet PDF文件第12页浏览型号TISPPBL1D的Datasheet PDF文件第13页浏览型号TISPPBL1D的Datasheet PDF文件第14页  
TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P  
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS  
FOR ERICSSON COMPONENTS SLICS  
AUGUST 1997 - REVISED DECEMBER 1999  
impulse generator  
A Keytek ECAT E-Class series 100 with an E502 surge network was used for testing. The E502 produces a  
0.5/700 voltage impulse. This particular waveform was used as it has the fastest rate of current rise (di/dt) of  
the commonly used lightning surge waveforms. This maximises the measured limiting voltage. Figure 4  
shows the current wavefront through the DUT. To produce a peak test current level of ±20 A, the E502  
charging voltage was set to ±1960 V. Figure 5 shows the DUT current di/dt. Initially the wavefront current rises  
at 60 A/µs, this rate then reduces as the peak current is approached. At the TISPPBLx V(BO) condition the  
di/dt is about 50 A/µs.  
limiting voltage levels  
Fifty devices were measured in the test circuit of Figure 3. The 50 devices were made up from groups of 5  
devices taken from 10 separately processed device lots. Figure 7 shows the total waveform variation of the  
thyristor limiting voltage across the 50 devices. This shows that the largest peak limiting voltage (Breakover  
voltage, V(BO)) is -62 V, a 12 V overshoot beyond the -50 V gate reference supply, VB. The limiting voltage  
exceeds the gate reference supply voltage level for a period (t(BR)) of about 0.4 µs.  
Figure 9 and Figure 11 show these two waveform parameters in terms of device population. In Figure 9, the  
limiting voltage is shown in terms of the overshoot beyond the gate reference supply (VB - V(BO)). Removing  
the gate reference voltage level magnifies the thyristor limiting voltage variation and shows the data  
stratification caused by the oscilloscope digitisation. Extrapolating the data trend indicates that the overshoot  
is less than 14 V at the 99.997% level (equal to 30 ppm of the population exceeding 14 V, equivalent to +4  
sigma point of a normal distribution). In Figure 11, extrapolating the thyristor data trend to the 99.997% level  
indicates a maximum breakdown time, t(BR), of 0.5 µs. Figure 12 shows that increasing the temperature up to  
85 °C increases the thyristor peak limiting voltage by 2.4%, giving a maximum 85 °C peak limiting voltage of  
1.024x(-50-14) = -65.5 V. Over the -40 °C to 85 °C temperature range the TISPPBLx is specified to have a  
maximum V(BO) value of -70 V and a breakdown time, t(BR), of 1 µs.  
Figure 8 shows the total waveform variation of the diode limiting voltage across the 50 devices. The peak  
limiting voltage (Peak Forward Recovery Voltage VFRM) is less than 6 V, and this value includes the 2 V of  
magnetically induced noise in the probe. Figure 9 shows that extrapolated 99.997% level is about 5.5 V. In  
Figure 11, extrapolating the diode data trend to the 99.997% level indicates a maximum forward recovery  
time, tFR, of 0.1 µs. Figure 12 indicates that there is about a 10% uplift by increasing the temperature to 85 °C.  
This gives a maximum 85 °C peak limiting voltage of 1.1x(5.5) = 6.1 V. Over the -40 °C to 85 °C temperature  
range, the TISPPBLx is specified to have a maximum VFRM value of 8 V and a maximum forward recovery  
time of 1 µs.  
Diodes do not switch to a much lower voltage like thyristors, so the diode limiting voltage applies for the whole  
impulse duration. Forward voltages of 1 V or less are normally considered safe. Figure 10 shows that the  
lowest current 1 V condition occurs at -40 °C with a current of 0.3 A. When the TISPPBLx is tested with the  
rated 10/1000 impulse it would take about 8 ms for the current to decay from 30 A to 0.3 A. Over the -40 °C to  
85 °C temperature range, the TISPPBLx is specified to have a VF below 1 V within 10 ms.  
SLIC protection requirements  
This clause discusses the voltage withstand capabilities of the various Ericsson Components SLIC groups  
and compares these to the TISPPBLx protector parameters. The examples provided are intended to provide  
designers information on how the TISPPBLx protector and specific SLICs work together. Designers should  
always follow the circuit design recommendations contained in the latest edition of a SLIC data sheet.  
temperature range  
Some SLICs are rated for 0 °C to 70 °C operation, others for -40 °C to 85 °C operation. The TISPPBLx  
protector is specified for -40 °C to 85 °C operation and so covers both temperature ranges.  
P R O D U C T  
I N F O R M A T I O N  
10