TISPPBL1D 参数 Datasheet PDF下载

TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

FOR ERICSSON COMPONENTS SLICS

AUGUST 1997 - REVISED DECEMBER 1999

recommended operating conditions

SEE Figure 18

C1

R1a

R1b

Gate decoupling capacitor

Series resistance for GR-1089-CORE first-level and second-level surge survival

Series resistance for GR-1089-CORE first-level surge survival

Series resistance for ITU-T recommendation K20/21

MIN

100

40

25

10

Ω

TYP

220

MAX

UNIT

nF

electrical characteristics, -40 °C

≤

T

A

≤

85 °C (unless otherwise noted)

PARAMETER

I

D

V

(BO)

t

(BR)

V

F

V

FRM

t

FR

I

H

I

GAS

I

GAT

Off-state current

Breakover voltage

Breakdown time

Forward voltage

Peak forward recovery

voltage

Forward recovery time

Holding current

Gate reverse current

Gate reverse current,

on state

Gate reverse current,

I

GAF

I

GT

V

GT

C

AK

NOTE

forward conducting

state

Gate trigger current

Gate trigger voltage

Anode-cathode off-

state capacitance

I

T

= -5 A, t

p(g)

≥

20 µs, V

GG

= -50 V, T

A

= 25 °C

I

T

= -5 A, t

p(g)

≥

20 µs, V

GG

= -50 V, T

A

= 25 °C

f = 1 MHz, V

d

= 1 V, I

G

= 0, T

A

= 25 °C

(see Note 3)

V

D

= -3 V

V

D

= -50 V

5

2.5

110

60

mA

V

pF

pF

I

F

= 1 A, t

w

= 500 µs, V

GG

= -50 V, T

A

= 25 °C

-10

mA

V

D

= V

DRM

, V

GK

= 0

TEST CONDITIONS

T

J

= -40 °C

T

J

= 85 °C

MIN

TYP

MAX

-5

-50

-70

1

3

8

1

10000

TISPPBL1

TISPPBL2

T

J

= -40 °C

T

J

= 85 °C

-105

-150

-5

-50

-1

UNIT

µA

µA

V

µs

V

V

µs

mA

µA

µA

mA

I

T

= -20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)

I

T

= -20 A, 0.5/700 generator, Figure 3 test cir-

cuit (See Figure 2)

I

F

= 5 A, t

w

= 500 µs

I

F

= 20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)

I

F

= 20 A, 0.5/700 generator, Figure 3 test

circuit (See Figure 2)

I

T

= -1 A, di/dt = 1A/ms, V

GG

= -50 V,

V

GG

= V

GKRM

, V

AK

= 0

I

T

= -0.5 A, t

w

= 500 µs, V

GG

= -50 V, T

A

= 25 °C

V

F

> 5 V

V

F

> 1 V

V

(BR)

< -50 V

3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER

R

θJA

Junction to free air thermal resistance

2

TEST CONDITIONS

P

tot

= 0.8 W, T

A

= 25 °C

5 cm , FR4 PCB

D Package

P Package

MIN

TYP

MAX

160

100

UNIT

°C/W

PRODUCT

INFORMATION

3