BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX25DZA
1·0
0·1
60%
40%
BULD25D
TA = 25°C
20%
10%
t1
0·01
duty cycle = t1/t2
Read time at end of t1,
t2
0%
æZ
ö
TJ (max) – TA = PD (peak) · ç qJA÷ · RqJA (max)
R
è
qJAø
102
0·001
10-4
10-3
10-2
10-1
100
101
103
t1 - Power Pulse Duration - s
Figure 8.
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX25SZA
1·0
0·1
60%
40%
BULD25SL
TA = 25°C
20%
10%
t1
t2
0·01
duty cycle = t1/t2
Read time at end of t1,
0%
æZ
ö
TJ (max) – TA = PD (peak) · ç qJA÷ · RqJA (max)
R
è
qJAø
102
0·001
10-4
10-3
10-2
10-1
100
101
103
t1 - Power Pulse Duration - s
Figure 9.
P R O D U C T
I N F O R M A T I O N
5
POINN [ POWER INNOVATIONS LTD ]
