BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX25DFB
LDX25SFB
10
1·0
10
1·0
BULD25D
TA = 25°C
BULD25SL
TA = 25°C
0·1
0·1
tp = 100 µs
tp = 10 ms
tp = 1 s
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
0·01
1·0
10
100
1000
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
VCE - Collector-Emitter Voltage - V
Figure 4.
Figure 5.
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
LDX25DRB
LDX25SRB
5
4
3
2
1
0
5
4
3
2
1
0
BULD25D
IB(on) = IC / 5
BULD25SL
IB(on) = IC / 5
VBE(off) = -5 V
VBE(off) = -5 V
TA
= 25°C
TA
= 25°C
0
100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
0
100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 6.
Figure 7.
P R O D U C T
I N F O R M A T I O N
4
POINN [ POWER INNOVATIONS LTD ]
