BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
INSTANTANEOUS FORWARD VOLTAGE
LDX25SHF
LDX25DVF
30
10
10
1·0
TA = 25°C
TA = 25°C
0·1
VCE = 1.5 V
VCE 5 V
VCE = 10 V
=
1·0
0·01
0·01
0·1
1·0
10
0
0·5
1·0
1·5
2·0
2·5
3·0
IC - Collector Current - A
VEC - Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
AMBIENT TEMPERATURE
LDX25SVB
1.0
0.9
0.8
0.7
0.6
IC = 0.5 A
IB = 0.1 A
-50
-25
0
25
50
75
100 125 150
TA - Ambient Temperature - °C
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
POINN [ POWER INNOVATIONS LTD ]
