BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued)
RATING
SYMBOL
VALUE
UNIT
Continuous collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current (see Note 1)
Peak base current (see Note 2)
IC
ICM
IB
2
4
A
A
A
A
1.5
IBM
2.5
BULD25D
see Figure 10
see Figure 11
0.5
Continuous device dissipation at (or below) 25°C ambient temperature
Ptot
W
BULD25SL
Maximum average continuous diode forward current at (or below) 25°C ambient temperature
Operating junction temperature range
IE(av)
Tj
A
-65 to +150
-65 to +150
°C
°C
Storage temperature range
Tstg
NOTES:1. This value applies for tp = 1 s.
2. This value applies for tp = 10 ms, duty cycle £ 2%.
electrical characteristics at 25°C ambient temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
VCEO(sus)
ICES
IC
=
0.1 A
400
V
VCE = 600 V
VBE = 0
IC = 0
10
1
µA
mA
V
IEBO
VEB
=
=
9 V
Base-emitter
VBE(sat)
VCE(sat)
IB
=
0.1 A
IC
=
0.5 A
(see Notes 3 and 4)
(see Notes 3 and 4)
0.9
1.1
saturation voltage
Collector-emitter
saturation voltage
IB
IB
=
=
0.1 A
0.2 A
10 V
IC
IC
=
=
0.5 A
1 A
0.3
0.6
18
0.5
1
V
VCE
IC = 0.01 A
10
10
10
Forward current
transfer ratio
hFE
VCE = 1.5 V
IC
IC
=
=
0.5 A
1 A
(see Notes 3 and 4)
(see Notes 3 and 4)
15
20
20
VCE
=
5 V
15
Anti-parallel diode
forward voltage
VEC
IE
=
1 A
1.5
1.7
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package.
thermal characteristics
PARAMETER
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
D package
165
115
RqJA
°C/W
SL Package
switching characteristics at 25°C ambient temperature
PARAMETER
TEST CONDITIONS
Measured by holding transistor
MIN
TYP
MAX
UNIT
Anti-parallel diode
trr
(see Note 5)
0.5
1
µs
reverse recovery time in an off condition, VEB = -3 V
ts
tf
Storage time
Fall time
(see Note 5)
(see Note 5)
2
3.5
5
µs
µs
0.25
0.35
NOTE 5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms.
P R O D U C T
I N F O R M A T I O N
2
POINN [ POWER INNOVATIONS LTD ]
