Philips Semiconductors
Product specification
Dual P-channel enhancement
mode MOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
35
PHP225
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per P-channel
V
(BR)DSS
V
GSth
I
DSS
I
GSS
I
Don
R
DSon
y
fs
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
on-state drain current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
V
GS
= 0; I
D
=
−10 µA
V
GS
= V
DS
; I
D
=
−1
mA
V
GS
= 0; V
DS
=
−24
V
V
GS
=
±20
V; V
DS
= 0
V
GS
=
−10
V; V
DS
=
−1
V
V
GS
=
−4.5
V; V
DS
=
−5
V
V
GS
=
−4.5
V; I
D
=
−0.5
A
V
GS
=
−10
V; I
D
=
−1
A
V
DS
=
−20
V; I
D
=
−1
A
V
GS
= 0; V
DS
=
−20
V; f = 1 MHz
V
GS
= 0; V
DS
=
−20
V; f = 1 MHz
V
GS
= 0; V
DS
=
−20
V; f = 1 MHz
V
GS
=
−10
V; V
DS
=
−15
V;
I
D
=
−2.3
A
V
GS
=
−10
V; V
DS
=
−15
V;
I
D
=
−2.3
A
V
GS
=
−10
V; V
DS
=
−15
V;
I
D
=
−2.3
A
V
GD
= 0 to
−10
V; V
DD
=
−20
V;
I
D
=
−1
A; R
L
= 20
Ω
V
GS
=
−10
to 0 V; V
DD
=
−20
V;
I
D
=
−1
A; R
L
= 20
Ω
V
GD
= 0; I
S
=
−1.25
A
I
S
=
−1.25
A; di/dt = 100 A/µs
−30
−1
−
−
−2.3
−1
−
−
1
−
−
−
−
−
−
−
−
−
−
−
−
0.33
0.22
2
250
140
50
10
1
3
−
−2.8
−100
±100
−
−
0.4
0.25
−
−
−
−
25
−
−
V
V
nA
nA
A
A
Ω
Ω
S
pF
pF
pF
nC
nC
nC
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times
t
on
t
off
turn-on time
turn-off time
−
−
20
50
80
140
ns
ns
Source-drain diode
V
DS
t
rr
source drain diode forward
voltage
reverse recovery time
−
−
−
150
−1.6
200
V
ns
1997 Jun 20
5
PHILIPS [ NXP SEMICONDUCTORS ]
