Philips Semiconductors
Product specification
Dual P-channel enhancement
mode MOS transistor
FEATURES
•
High-speed switching
•
No secondary breakdown
•
Very low on-resistance.
APPLICATIONS
•
Motor and actuator driver
•
Power management
•
Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
4
s1
g
1
d1 d1
5
PHP225
PINNING - SOT96-1 (SO8)
PIN
1
2
3
4
5
6
7
8
SYMBOL
s
1
g
1
s
2
g
2
d
2
d
2
d
1
d
1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
handbook, halfpage
d2 d2
8
MAM119
s2
g
2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
Per P-channel
V
DS
V
SD
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
I
D
=
−1
A; V
GS
=
−10
V
T
s
= 80
°C
I
S
=
−1.25
A
open drain
I
D
=
−1
mA; V
DS
= V
GS
−
−
−
−1
−
−
−
−30
−1.6
±20
−2.8
−2.3
0.25
2
V
V
V
V
A
Ω
W
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Jun 20
2
PHILIPS [ NXP SEMICONDUCTORS ]
