Philips Semiconductors
Product specification
Dual P-channel enhancement
mode MOS transistor
PHP225
handbook, halfpage
6
MBE156
handbook, halfpage
10
4
MDA165
IS
(A)
4
RDSon
(mΩ)
(1) (2)(3) (4) (5)
10
3
(1)
(2)
(3)
2
0
0
0.5
1
1.5
V SD (V)
V
GD
= 0.
(1) T
j
= 150
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−55 °C.
2
10
2
0
−2
−4
−6
−8
−10
VGS (V)
−V
DS
≥ −I
D
×
R
DSon
; T
j
= 25
°C.
(1) I
D
=
−0.1
A.
(2) I
D
=
−0.5
A.
(3) I
D
=
−1
A.
(4) I
D
=
−2.3
A.
(5) I
D
=
−4.5
A.
Fig.9
Fig.8
Source current as a function of source-drain
diode forward voltage.
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
handbook, halfpage
1.2
MBE138
handbook, halfpage
1.8
MBE146
k
1.1
k
1.6
(1)
(2)
1.0
1.4
0.9
1.2
0.8
1.0
0.7
0.8
0.6
50
0
50
100
T j ( C)
V
GSth
at T
j
k
=
-------------------------------------
-
V
GSth
at 25°C
Typical V
GSth
at I
D
= 1 mA; V
DS
=V
GS
= V
GSth
.
o
150
0.6
50
0
50
100
R
DSon
at T
j
k
=
----------------------------------------
-
R
DSon
at 25
°C
Typical R
DSon
at:
(1) I
D
=
−1
A; V
GS
=
−10
V.
(2) I
D
=
−0.5
A; V
GS
=
−4.5
V.
T j ( C)
o
150
Fig.10 Temperature coefficient of gate-source
threshold voltage.
Fig.11 Temperature coefficient of drain-source
on-resistance.
1997 Jun 20
7
PHILIPS [ NXP SEMICONDUCTORS ]
