PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source
breakdown voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C;
P-channel
-300
-
-
-
-
-
-
-
-
-
-
-
-
-
V
ID = 10 µA; VGS = 0 V; Tj = 25 °C;
N-channel
300
-
V
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
0.8
2
V
N-channel
ID = -1 mA; VDS = VGS; Tj = 25 °C;
P-channel
-0.8
-2
V
drain leakage current
VDS = -240 V; VGS = 0 V; Tj = 25 °C;
P-channel
-
-
-
-
-
-
-
-
-100
100
100
100
100
100
6
nA
nA
nA
nA
nA
nA
Ω
V
DS = 240 V; VGS = 0 V; Tj = 25 °C;
N-channel
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
N-channel
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
N-channel
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
P-channel
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
P-channel
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 170 mA; Tj = 25 °C;
N-channel
VGS = -10 V; ID = -115 mA; Tj = 25 °C;
P-channel
17
Ω
Dynamic characteristics
QG(tot)
total gate charge
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
-
-
-
6240
2137
226
-
-
-
pC
pC
pC
ID = -115 mA; VDS = -50 V; VGS = -10 V;
Tj = 25 °C; P-channel
QGS
QGD
Ciss
gate-source charge
gate-drain charge
input capacitance
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
ID = -115 mA; VDS = -50 V; VGS = -10 V;
Tj = 25 °C; P-channel
-
-
-
68
-
-
-
pC
pC
pC
674
1385
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel
-
-
-
-
102
45
-
-
-
-
pF
pF
pF
pF
VDS = -50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; P-channel
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel
15
VDS = -50 V; VGS = 0 V; f = 1 MHz;
15
Tj = 25 °C; P-channel
PHC2300
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
5 of 14
NXP [ NXP ]
