NXP Semiconductors
PHC2300
Complementary enhancement mode MOS transistors
1200
I
D
(mA)
mld842
−800
I
D
(mA)
−600
mbh440
800
−400
400
−200
0
0
2
4
6
8
10
V
GS
(V)
0
0
−2
−4
−6
−8
−10
V
GS
(V)
V
DS
= 10 V; T
amb
= 25 °C; t
p
= 80
μs; δ
= 0.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; N-channel;
typical values
mld843
V
DS
= -10 V; T
amb
= 25 °C; t
p
= 80
μs; δ
= 0.
Fig 8.
Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
12
mld844
200
C
(pF)
150
50
V
GS
(V)
V
DS
(V)
37.5
8
C
iss
100
(1)
(2)
25
4
50
C
oss
C
rss
0
0
5
10
15
25
20
V
DS
(V)
0
0
1560
3120
12.5
0
4680
6240
Q
G
(pC)
V
DS
= 50 V; I
D
= 170 mA; T
amb
= 25 °C.
(1) V
DS
(2) V
GS
Fig 9.
Input, output and reverse transfer capacitances
as a function of drain-source voltage;
N-channel; typical values
Fig 10. Gate-source voltage and drain-source voltage
as a function of gate charge; N-channel typical
values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
7 of 14
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