PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mgl245
−10
I
D
(A)
−1
(1)
−1
−10
t
p
P
δ =
T
DC
−2
−10
−10
t
t
p
T
−3
2
3
−10
−10
−10
−1
V
DS
(V)
δ = 0.01; Tsp = 80 °C.
(1) RDSon limitation.
Fig 3. SOAR; P-channel
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to solder point
-
-
43
K/W
mda244
2
10
(1)
(2)
(3)
R
(K/W)
th js
(4)
(5)
10
(6)
(7)
t
p
(8)
(9)
P
1
δ =
T
(10)
t
t
p
T
p
−1
10
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
t
(s)
(1) δ = 1.00. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Fig 4. Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
P-channel; typical values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
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