SO
PHC2300
Complementary enhancement mode MOS transistors
Rev. 05 — 24 February 2011
Product data sheet
1. Product profile
1.1 General description
One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
8
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High-speed line drivers
Line transformer drivers
Relay drivers
Universal line interface in telephone
sets
1.4 Quick reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
drain-source
voltage
Conditions
T
j
≥
25 °C; T
j
≤
150 °C;
N-channel
T
j
≥
25 °C; T
j
≤
150 °C;
P-channel
I
D
P
tot
drain current
total power
dissipation
drain-source
on-state
resistance
T
sp
= 80 °C; N-channel
T
sp
= 80 °C; P-channel
T
sp
= 80 °C
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max Unit
300
V
-300 V
340
1.6
mA
W
-235 mA
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 170 mA;
T
j
= 25 °C; N-channel
V
GS
= -10 V; I
D
= -115 mA;
T
j
= 25 °C; P-channel
-
-
-
-
6
17
Ω
Ω
PHILIPS [ NXP SEMICONDUCTORS ]
