PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mld845
mda239
50
12
−0.5
I
SD
V
DS
V
(A)
GS
(V)
(V)
−0.4
37.5
8
−0.3
−0.2
−0.1
0
25
(1)
(2)
4
12.5
0
0
0
535
1070
1605
2140
(pC)
0
−0.4
−0.8
−1.2
V
(V)
SD
Q
G
VDS = -50 V; ID = -115 mA; Tamb = 25 °C.
(1) VDS
(2) VGS
Fig 11. Gate-source voltage and drain-source voltage
as a function of gate charge; P-channel typical
values
Fig 12. Source current as a function of source-drain
voltage; P-channel typical values
mld846
mda233
2
2
10
10
(1)
(2)
(3)
(1)
(2)
(3)
(4)
(5)
R
DSon
(4)
(5)
R
(Ω)
DSon
(Ω)
10
10
1
1
0
2
4
6
8
10
(V)
0
−2
−4
−6
−8
V
−10
(V)
V
GS
GS
VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0.
(1) ID = 10 mA.
VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0.
(1) ID = -10 mA.
(2) ID = 20 mA.
(2) ID = -20 mA.
(3) ID = 50 mA.
(3) ID = -50 mA.
(4) ID = 100 mA.
(4) ID = -100 mA.
(5) ID = 200 mA.
(5) ID = -200 mA.
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; N-channel typical
values
Fig 14. Drain-source on-state resistance as a function
of gate-source voltage; P-channel typical
values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
8 of 14
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