PESDxS1UL series
NXP Semiconductors
Unidirectional ESD protection diodes
I
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10
I
RM
I
RM(25°C)
(1)
(2)
−V
CL
−V −V
BR RWM
V
−I
−I
RM
R
1
−
+
P-N
−1
−100
−I
10
PP
−50
0
50
100
150
T (°C)
j
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(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
IR is less than 15 nA at 150 C for:
PESD12VS1UL; VRWM = 12 V
PESD15VS1UL; VRWM = 15 V
PESD24VS1UL; VRWM = 24 V
Fig 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8. V-I characteristics for a unidirectional ESD
protection diode
PESDXS1UL_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
7 of 15
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