PESDxS1UL series
NXP Semiconductors
Unidirectional ESD protection diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPP
Parameter
Conditions
tp = 8/20 s
tp = 8/20 s
Min
Max
Unit
[1]
[1]
peak pulse power
peak pulse current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
junction temperature
ambient temperature
storage temperature
-
150
W
IPP
-
15
A
-
15
A
-
5
A
-
5
A
-
3
A
Tj
-
150
+150
+150
C
C
C
Tamb
Tstg
65
65
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Table 6.
Symbol Parameter
VESD electrostatic discharge voltage
ESD maximum ratings
Conditions
Min
Max
Unit
[1]
IEC 61000-4-2
(contact discharge)
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
PESDxS1UL series
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
MIL-STD-883
(human body model)
[1] Device stressed with ten non-repetitive ESD pulses.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
> 8 kV
MIL-STD-883; class 3B (human body model)
PESDXS1UL_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
3 of 15
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