PESDxS1UL series
NXP Semiconductors
Unidirectional ESD protection diodes
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 μs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 μs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (μs)
Fig 1. 8/20 s pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61000-4-5
6. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
VRWM
reverse standoff voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
reverse leakage current
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
breakdown voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
V
V
V
V
V
15
24
IRM
VRWM = 3.3 V
VRWM = 5.0 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IR = 5 mA
-
-
-
-
-
0.7
0.1
< 1
< 1
< 1
2
A
A
nA
nA
nA
1
50
50
50
[1]
VBR
5.2
6.4
5.6
6.8
6.0
7.2
V
V
V
V
V
14.7 15.0 15.3
17.6 18.0 18.4
26.5 27.0 27.5
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
4 of 15
NXP [ NXP ]
