PESDxS1UL series
NXP Semiconductors
Unidirectional ESD protection diodes
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4
10
1.2
P
PP
P
PP
(W)
P
PP(25°C)
3
10
0.8
2
10
0.4
10
0
2
3
1
10
10
10
0
50
100
150
200
t
(μs)
T (°C)
j
p
Tamb = 25 C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
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240
50
C
C
d
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
(V)
V (V)
R
R
f = 1 MHz; Tamb = 25 C
f = 1 MHz; Tamb = 25 C
(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
(1) PESD12VS1UL; VRWM = 12 V
(2) PESD15VS1UL; VRWM = 15 V
(3) PESD24VS1UL; VRWM = 24 V
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
PESDXS1UL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 25 October 2011
6 of 15
NXP [ NXP ]
