Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
25
ID, Drain current (Amps)
VDS > ID x RDS(on)max
PHP8N50
4
VGS(TO) / V
max.
20
3
typ.
15
min.
2
10
1
5
Tj = 150 C
0
0
Tj = 25 C
0
2
4
6
VGS, Gate-Source voltage (Volts)
8
10
-60
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
gfs, Transconductance (S)
VDS > ID x RDS(on)max
Tj = 25 C
8
150 C
6
PHP8N50
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
ID / A
SUB-THRESHOLD CONDUCTION
10
1E-01
1E-02
1E-03
2%
typ
98 %
4
1E-04
2
1E-05
0
1E-06
0
5
10
15
ID, Drain current (A)
20
25
0
1
2
VGS / V
3
4
Fig.8. Typical transconductance.
g
fs
= f(I
D
); parameter T
j
a
Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
PHP8N50
10000
Junction capacitances (pF)
2
Ciss
1000
1
100
Coss
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
100 120 140
10
1
10
100
VDS, Drain-Source voltage (Volts)
1000
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 4.25 A; V
GS
= 10 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
March 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
