Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
VGS(TO) / V
ID, Drain current (Amps)
25
PHP8N50
max.
VDS > ID x RDS(on)max
4
3
2
1
0
20
typ.
15
10
5
min.
Tj = 150 C
Tj = 25 C
0
-60 -40 -20
0
20
40
Tj /
60
C
80 100 120 140
0
2
4
6
8
10
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
SUB-THRESHOLD CONDUCTION
ID / A
gfs, Transconductance (S)
PHP8N50
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
10
8
VDS > ID x RDS(on)max
Tj = 25 C
150 C
2 %
typ
98 %
6
4
2
0
0
1
2
3
4
0
5
10
15
20
25
ID, Drain current (A)
VGS / V
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
PHP8N50
Junction capacitances (pF)
10000
1000
100
2
Ciss
1
0
Coss
Crss
10
-60 -40 -20
0
20 40 60 80 100 120 140
Tj /
1
10
100
1000
C
VDS, Drain-Source voltage (Volts)
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 4.25 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
March 1999
4
Rev 1.000
NXP [ NXP ]
