Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
Normalised Power Derating
PD%
PHP6N60
Zth j-mb, Transient thermal impedance (K/W)
D = 0.5
120
110
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0.2
0.1
0.05
0.02
0.01
0.001
tp
T
tp
P
D =
D
single pulse
10us
t
T
1us
100us
1ms
1s
10ms
100ms
0
20
40
60
80
Tmb /
100
120
140
C
tp, pulse width (s)
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
PHP8N50
10 V
ID, Drain current (Amps)
Tj = 25 C
120
110
100
90
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
7 V
6.5 V
6 V
5.5 V
5 V
VGS = 4.5 V
0
0
20
40
60
80
Tmb /
100
120
140
0
5
10
15
20
25 30
VDS, Drain-Source voltage (Volts)
C
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
ID / A
PHP8N50
Tj = 25 C
BUK457-500B
RDS(on), Drain-Source on resistance (Ohms)
2
100
4.5 V
5 V
5.5 V
VGS = 6 V
1.5
1
tp = 10 us
6.5 V
10
7 V
RDS(ON) = VDS/ID
100 us
1 ms
10 V
DC
1
10 ms
0.5
0
100 ms
0.1
1
10
100
VDS / V
1000
0
5
10
15
20
25
ID, Drain current (Amps)
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
March 1999
3
Rev 1.000
NXP [ NXP ]
