Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
g
IRF840
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 500 V
I
D
= 8.5 A
R
DS(ON)
≤
0.85
Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF840 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
MIN.
-
MAX.
531
UNIT
mJ
Unclamped inductive load, I
AS
= 7.4 A;
t
p
= 0.22 ms; T
j
prior to avalanche = 25˚C;
V
DD
≤
50 V; R
GS
= 50
Ω;
V
GS
= 10 V; refer
to fig:17
Repetitive avalanche energy
1
I
AR
= 8.5 A; t
p
= 2.5
µs;
T
j
prior to
avalanche = 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
E
AR
I
AS
, I
AR
-
-
13
8.5
mJ
A
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
