Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction in free air
to ambient
-
-
-
0.85 K/W
K/W
60
-
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS Drain-source breakdown
CONDITIONS
MIN. TYP. MAX. UNIT
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
500
-
-
-
-
V
voltage
∆V(BR)DSS / Drain-source breakdown
0.1
%/K
∆Tj
voltage temperature
coefficient
RDS(ON)
VGS(TO)
gfs
Drain-source on resistance
Gate threshold voltage
Forward transconductance
VGS = 10 V; ID = 4.8 A
VDS = VGS; ID = 0.25 mA
VDS = 30 V; ID = 4.8 A
-
2.0
3.5
-
0.6
3.0
6
0.85
4.0
-
Ω
V
S
IDSS
Drain-source leakage current VDS = 500 V; VGS = 0 V
1
25
µA
µA
nA
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
-
40
10
250
200
IGSS
Gate-source leakage current VGS = ±30 V; VDS = 0 V
-
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 8.5 A; VDD = 400 V; VGS = 10 V
-
-
-
55
5.5
30
80
7
45
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 250 V; RD = 30 Ω;
RG = 9.1 Ω
-
-
-
-
18
37
80
36
-
-
-
-
ns
ns
ns
ns
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
960
140
80
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IS
Continuous source current
(body diode)
Tmb = 25˚C
-
-
-
-
-
-
8.5
34
A
A
V
ISM
Pulsed source current (body Tmb = 25˚C
diode)
VSD
Diode forward voltage
IS = 8.5 A; VGS = 0 V
1.2
trr
Qrr
Reverse recovery time
Reverse recovery charge
IS = 8.5 A; VGS = 0 V; dI/dt = 100 A/µs
-
-
440
6.4
-
-
ns
µC
March 1999
2
Rev 1.000
NXP [ NXP ]
