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IRF640 参数 Datasheet PDF下载

IRF640图片预览
型号: IRF640
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道晶体管的TrenchMOS [N-channel TrenchMOS transistor]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 97 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
A
E
A1
mounting
base
D1
D
HD
2
Lp
1
3
b
c
Q
e
e
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.50
4.10
A1
1.40
1.27
b
0.85
0.60
c
0.64
0.46
D
max.
11
D1
1.60
1.20
E
10.30
9.70
e
2.54
Lp
2.90
2.10
HD
15.40
14.80
Q
2.60
2.20
OUTLINE
VERSION
SOT404
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
8
Rev 1.100