Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
Peak non-repetitive
avalanche current
CONDITIONS
Unclamped inductive load, I
AS
= 6.2 A;
t
p
= 720
µs;
T
j
prior to avalanche = 25˚C;
V
DD
≤
25 V; R
GS
= 50
Ω;
V
GS
= 10 V; refer
to fig;14
MIN.
-
MAX.
580
UNIT
mJ
I
AS
-
16
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
TYP. MAX. UNIT
-
60
50
1.1
-
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
GS
= 10 V; I
D
= 8 A
V
GS
=
±
20 V; V
DS
= 0 V
V
DS
= 200 V; V
GS
= 0 V;
V
DS
= 160 V; V
GS
= 0 V; T
j
= 175˚C
I
D
= 18 A; V
DD
= 160 V; V
GS
= 10 V
T
j
= 175˚C
MIN.
200
178
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
3
-
130
-
10
0.05
-
-
-
-
12
45
54
38
3.5
4.5
7.5
1850
170
91
-
-
4
-
6
180
522
100
10
250
63
12
35
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
mΩ
mΩ
nA
µA
µA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
pF
pF
pF
V
DD
= 100 V; R
D
= 5.6
Ω;
V
GS
= 10 V; R
G
= 5.6
Ω
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
August 1999
2
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
