Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
E
P
A
A1
q
D1
D
L2
(1)
L1
Q
L
b1
1
2
3
b
c
e
e
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.5
4.1
A1
1.39
1.27
b
0.9
0.7
b1
1.3
1.0
c
0.7
0.4
D
15.8
15.2
D1
6.4
5.9
E
10.3
9.7
e
2.54
L
15.0
13.5
L1
3.30
2.79
L2
max.
3.0
(1)
P
3.8
3.6
q
3.0
2.7
Q
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
TO-220
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
7
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
