HEF4520B
NXP Semiconductors
Dual binary counter
9. Static characteristics
Table 6.
Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter Conditions
VDD
Tamb = 40 C Tamb = 25 C
Tamb = 85 C Unit
Min
Max
-
Min
Max
-
Min
Max
VIH
HIGH-level input voltage IO < 1 A
5 V
10 V
15 V
5 V
3.5
3.5
3.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
7.0
-
7.0
-
7.0
11.0
-
11.0
-
11.0
-
VIL
LOW-level input voltage
IO < 1 A
-
1.5
3.0
4.0
-
-
1.5
3.0
4.0
-
-
1.5
3.0
4.0
-
10 V
15 V
5 V
-
-
-
-
-
-
VOH
VOL
IOH
HIGH-level output voltage IO < 1 A;
VI = VSS or VDD
4.95
4.95
4.95
10 V
15 V
5 V
9.95
-
9.95
-
9.95
-
14.95
-
14.95
-
14.95
-
LOW-level output voltage IO < 1 A;
VI = VSS or VDD
-
0.05
0.05
0.05
1.7
0.52
1.3
3.6
-
-
0.05
0.05
0.05
1.4
0.44
1.1
3.0
-
-
0.05
0.05
0.05
10 V
15 V
5 V
-
-
-
-
-
-
HIGH-level output current VO = 2.5 V
-
-
-
1.1 mA
0.36 mA
0.9 mA
2.4 mA
VO = 4.6 V
VO = 9.5 V
5 V
-
-
-
10 V
15 V
5 V
-
-
-
VO = 13.5 V
-
-
-
IOL
LOW-level output current VO = 0.4 V
VO = 0.5 V
0.52
0.44
0.36
-
-
-
mA
mA
mA
10 V
15 V
15 V
5 V
1.3
-
1.1
-
0.9
VO = 1.5 V
3.6
-
3.0
-
2.4
II
input leakage current
supply current
VDD = 15 V
-
-
-
-
-
0.3
20
40
80
-
-
-
-
-
-
0.3
20
40
80
7.5
-
-
-
-
-
1.0 A
150 A
300 A
600 A
IDD
IO = 0 A;
VI = VSS or VDD
10 V
15 V
-
CI
input capacitance
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
VSS = 0 V; Tamb = 25 C; for test circuit see Figure 6; unless otherwise specified.
Symbol Parameter
Conditions
VDD
5 V
Extrapolation formula
83 ns + (0.55 ns/pF)CL
39 ns + (0.23 ns/pF)CL
32 ns + (0.16 ns/pF)CL
48 ns + (0.55 ns/pF)CL
24 ns + (0.23 ns/pF)CL
17 ns + (0.16 ns/pF)CL
Min
Typ
110
50
Max Unit
[1]
tPHL
HIGH to LOW
nCP0, nCP1 nQn;
-
-
-
-
-
-
220
100
80
ns
ns
ns
ns
ns
ns
propagation delay see Figure 5
10 V
15 V
5 V
40
nMR nQn;
see Figure 5
75
150
70
10 V
15 V
35
25
50
HEF4520B
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 18 November 2011
5 of 14
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