Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP225
handbook, halfpage
−1
MDA707
ID
−10
3
handbook, halfpage
MDA708
VGS =
−10
V
−5
V
(A)
−0.8
ID
(mA)
−4
V
−0.6
−10
2
−0.4
−0.2
0
0
−2
−4
−6
−8
−10
VGS (V)
−10
8
12
16
20
24
28
RDSon (Ω)
Fig.6
Typical transfer characteristic;
−V
DS
= 10 V;
T
j
= 25
°C.
Fig.7
Typical on-resistance as a function of drain
current; T
j
= 25
°C;
R
DS(on)
= f(I
D
).
handbook, halfpage
160
MDA734
handbook, halfpage
2.5
k
2
MDA710
C
(pF)
120
1.5
80
Ciss
1
40
Coss
Crss
0
0
−5
−10
−15
−20
−25
VDS (V)
0
−50
0
50
100
150
0.5
Tj (°C)
Fig.9
Fig.8
Typical capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°C.
Temperature coefficient of drain-source
on-resistance;
R
DS
(
on
)
at T
j
k
= ----------------------------------------------
;
R
DS
(
on
)
at 25
°C
typical R
DS(on)
at
−200
mA/−10 V.
April 1995
6
PHILIPS [ NXP SEMICONDUCTORS ]
