Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
FEATURES
•
Low R
DS(on)
•
Direct interface to C-MOS, TTL,
etc.
•
High-speed switching
•
No secondary breakdown.
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope,
intended for use in relay, high-speed
and line transformer drivers.
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain
1
Top view
2
3
MAM121
BSP225
QUICK REFERENCE DATA
SYMBOL
−V
DS
−I
D
R
DS(on)
−V
GS(th)
PARAMETER
drain-source voltage
drain current
drain-source on-resistance
gate-source threshold voltage
DC value
−I
D
= 200 mA
−V
GS
= 10 V
−I
D
= 1 mA
V
GS
= V
DS
CONDITIONS
MAX.
250
225
15
2.8
UNIT
V
mA
Ω
V
PIN CONFIGURATION
handbook, halfpage
4
d
DESCRIPTION
g
s
Fig.1 Simplified outline and symbol.
April 1995
2
PHILIPS [ NXP SEMICONDUCTORS ]
