Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
−V
DS
±V
GSO
−I
D
−I
DM
P
tot
T
stg
T
j
Note
PARAMETER
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
open drain
DC value
peak value
up to T
amb
= 25
°C
(note 1)
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BSP225
MAX.
250
20
225
600
1.5
150
150
UNIT
V
V
mA
mA
W
°C
°C
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
2
.
THERMAL RESISTANCE
SYMBOL
R
th j-a
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
2
.
from junction to ambient (note 1)
PARAMETER
VALUE
83.3
UNIT
K/W
April 1995
3
PHILIPS [ NXP SEMICONDUCTORS ]
