Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
handbook, full pagewidth
VDD
Vin
RL
Vout
0
90 %
10 %
90 %
Vin
Vout
10 %
0
td(on)
tf
MAM274
td(off)
tr
toff
ton
Fig.5 Switching times test circuit with input and output waveforms.
handbook, halfpage
5
MBK507
16
VDS
14
(V)
handbook, halfpage
(3)(4) (5)
(1)(2)
4
MBK505
VGS
(V)
4
12
10
ID
(A)
3
(6)
3
2
8
(1)
(2)
(7)
2
6
1
4
(8)
1
2
0
1000
1000
1600
1800
1800
2000
2200
200
400
600
800
0
0
(9)
0
0
2
4
6
8
10
VDS (V)
QG (pC)
V
DD
= 15 V; I
D
= 0.5 A; T
amb
= 25
°C.
(1) V
DS
.
(2) V
GS.
T
amb
= 25
°C;
t
p
= 300
µs; δ
= 0.
(1) V
GS
= 7.5 V.
(2) V
GS
= 5.5 V.
(3) V
GS
= 4.5 V.
(4) V
GS
= 3.5 V.
(5)
(6)
(7)
(8)
(9)
V
GS
= 3 V.
V
GS
= 2.5 V.
V
GS
= 2 V.
V
GS
= 1.5 V.
V
GS
= 1 V.
Fig.6
Gate-source and drain-source voltages as
functions of total gate charge; typical values.
Fig.7
Output characteristics; typical values.
1998 Feb 11
6
PHILIPS [ NXP SEMICONDUCTORS ]
