Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VGS = 0; ID = 10 µA
MIN.
30
TYP.
MAX. UNIT
V(BR)DSS drain-source breakdown voltage
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
gate leakage current
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±8 V; VDS = 0
0.4
−
−
−
V
−
100
±100
0.4
0.5
0.6
−
nA
nA
Ω
IGSS
−
−
RDSon
drain-source on-state resistance VGS = 4.5 V; ID = 0.5 A
GS = 2.5 V; ID = 0.5 A
−
−
V
−
−
Ω
VGS = 1.8 V; ID = 0.25 A
−
−
Ω
Ciss
Coss
Crss
QG
input capacitance
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
−
83
27
14
2100
pF
pF
pF
pC
output capacitance
reverse transfer capacitance
total gate charge
−
−
−
−
VGS = 4.5 V; VDD = 15 V;
−
−
ID = 0.5 A; Tamb = 25 °C
QGS
QGD
gate-source charge
gate-drain charge
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
−
−
95
−
−
pC
pC
VDD = 15 V; ID = 0.5 A;
670
Tamb = 25 °C
Switching times
td(on) turn-on delay time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
−
−
−
−
−
2.5
3.5
6
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
tf
fall time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
ton
turn-on switching time
turn-off delay time
rise time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
td(off)
tr
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
20
7
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
toff
turn-off switching time
VGS = 8 to 0 V; VDD = 15 V;
27
ID = 0.5 A; Rgen = 6 Ω
Source-drain diode
VSD source-drain diode forward
VGD = 0; IS = 0.5 A
−
−
−
1
V
voltage
trr
reverse recovery time
IS = 0.5 A; di/dt = −100 A/µs
25
−
ns
1998 Feb 11
5
NXP [ NXP ]
