Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
I
DM
P
tot
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
T
s
= 80
°C;
note 1
note 2
T
s
= 80
°C
T
amb
= 25
°C;
note 3
T
amb
= 25
°C;
note 4
T
stg
T
j
I
S
I
SM
Notes
1. T
s
is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
storage temperature
operating junction temperature
T
s
= 80
°C
note 2
CONDITIONS
−
−
−
−
−
−
−
−55
−55
−
−
MIN.
BSH103
MAX.
30
±8
0.85
3.4
0.5
0.75
0.54
+150
+150
V
V
A
A
UNIT
W
W
W
°C
°C
Source-drain diode
source current (DC)
peak pulsed source current
0.5
2
A
A
MGM190
MBK502
handbook, halfpage
0.6
handbook, halfpage
10
Ptot
(W)
0.4
IDS
(A)
(2)
1
(1)
10
−
1
P
0.2
10
−
2
tp
0
0
40
80
120
Ts (°C)
160
10
−
3
10
−
1
T
1
10
VDS (V)
10
2
t
δ
= T
tp
DC
δ
= 0.01; T
s
= 80
°C.
(1) R
DSon
limitation.
(2) Pulsed.
Fig.2 Power derating curve.
Fig.3 SOAR.
1998 Feb 11
3
PHILIPS [ NXP SEMICONDUCTORS ]
