Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
FEATURES
PINNING - SOT23
PIN
• Very low threshold
SYMBOL
DESCRIPTION
• High-speed switching
1
2
3
g
s
d
gate
• No secondary breakdown
• Direct interface to C-MOS, TTL etc.
source
drain
APPLICATIONS
3
• Power management
handbook, halfpage
d
s
• DC to DC converters
• Battery powered applications
• ‘Glue-logic’; interface between logic blocks and/or
periphery
g
• General purpose switch.
1
2
Top view
MAM273
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETERS
CONDITIONS
MIN.
MAX.
30
UNIT
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
−
−
−
V
V
V
V
A
Ω
W
VSD
VGS
VGSth
ID
VGD = 0; IS = 0.5 A
1
±8
−
VDS = VGS; ID = 1 mA
Ts = 80 °C
0.4
−
0.85
0.5
0.5
RDSon
Ptot
drain-source on-state resistance
total power dissipation
VGS = 2.5 V; ID = 0.5 A
Ts = 80 °C
−
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
2
NXP [ NXP ]
