Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
handbook, halfpage
4
MBK506
handbook, halfpage
300
MBK504
ID
(A)
3
C
(pF)
200
2
100
1
Ciss
0
0
1
2
VGS (V)
3
0
0
10
20
Coss
Crss
VDS (V)
30
V
DS
= 10 V; T
amb
= 25
°C;
t
p
= 300
µs; δ
= 0.
V
GS
= 0 ; f = 1 MHz; T
amb
= 25
°C.
Fig.9
Fig.8
Transfer characteristic; typical values.
Capacitance as a function of drain-source
voltage; typical values.
handbook, halfpage
2
MBK508
IS
(A)
handbook, halfpage
10
MBK509
RDSon
(Ω)
(1) (2) (3) (4)
1.6
1.2
(5) (6)
1
0.8
(1)
(2)
(3)
0.4
0
10
−1
0
0.4
0.8
VSD (V)
1.2
0
2
4
6
8
10
VGS (V)
V
GD
= 0.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−65 °C.
T
amb
= 25
°C;
t
p
= 300
µs; δ
= 0.
(1) I
D
= 0.1 A.
(2) I
D
= 0.22 A.
(3) I
D
= 0.45 A.
(4) I
D
= 0.9 A.
(5) I
D
= 1.8 A.
(6) I
D
= 3.6 A.
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
1998 Feb 11
7
PHILIPS [ NXP SEMICONDUCTORS ]
