BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
mgt729
006aab424
4
9
10
10
V
CEsat
(mV)
f
T
(Hz)
3
10
8
10
2
10
(1)
(3) (2)
7
10
10
10
−1
2
3
−1
2
1
10
10
10
10
1
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20
VCE = 5 V; f = 1 MHz; Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 9. Per transistor: Transition frequency as a
function of collector current; typical values
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
7 of 12
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