BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
50
45
V
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
5
V
100
200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
200
mA
[1]
[2]
total power dissipation
Tamb ≤ 25 °C
-
-
220
250
mW
mW
Per device
[1]
[2]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
300
mW
mW
°C
-
400
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab419
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
3 of 12
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