BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
006aab421
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
ICBO
collector-basecut-off VCB = 30 V; IE = 0 A
-
-
-
-
15
5
nA
current
VCB = 30 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
200
-
450
100
300
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
-
-
-
-
mV
mV
mV
[1]
-
VBEsat
base-emitter
755
saturation voltage
VBE
Cc
base-emitter voltage IC = 2 mA; VCE = 5 V
580
-
655
-
700
1.5
mV
pF
collector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
Ce
fT
emitter capacitance IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
-
11
-
-
-
pF
transition frequency IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
5 of 12
NXP [ NXP ]
