BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
[1]
[2]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
-
-
-
-
568
500
230
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
[2]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
-
-
416
313
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab420
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
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