BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
mgt727
006aab422
600
0.20
I
(mA) = 4.0
B
3.6
2.8
h
FE
I
C
3.2
2.4
(1)
(2)
(A)
500
2.0
0.15
1.6
400
300
200
100
0
1.2
0.8
0.10
0.05
0
0.4
(3)
−1
2
3
10
1
10
10
10
0
1
2
3
4
5
V
(V)
I
(mA)
CE
C
VCE = 5 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. Per transistor: DC current gain as a function of
collector current; typical values
Fig 5. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
mgt728
006aab423
1.2
1200
V
BE
V
BEsat
(V)
(mV)
1000
1.0
0.8
0.6
0.4
0.2
(1)
(2)
(1)
(2)
800
600
400
200
0
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 7. Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
6 of 12
NXP [ NXP ]
