Philips Semiconductors
Preliminary specification
2-input EXCLUSIVE-OR gate
74LVC1G86
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
Tamb (°C)
SYMBOL
PARAMETER
−40 to +85
TYP.(1)
UNIT
OTHER
VCC (V)
MIN.
MAX.
VIH
HIGH-level input
voltage
1.65 to 1.95 0.65 × VCC
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.7
−
−
−
−
2
−
0.7 × VCC
−
VIL
LOW-level input
voltage
−
−
−
−
−
−
−
−
−
−
−
0.35 × VCC
−
0.7
−
0.8
−
0.3 × VCC
VOL
LOW-level output
voltage
VI = VIH or VIL; IO = 100 µA 1.65 to 5.5
−
0.1
0.45
0.3
0.4
0.55
0.55
−
VI = VIH or VIL; IO = 4 mA
VI = VIH or VIL; IO = 8 mA
VI = VIH or VIL; IO = 12 mA
VI = VIH or VIL; IO = 24 mA
VI = VIH or VIL; IO = 32 mA
1.65
2.3
2.7
3.0
4.5
−
−
−
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL; IO = −100 µA 1.65 to 5.5
VCC − 0.1
−
VI = VIH or VIL; IO = −4 mA
VI = VIH or VIL; IO = −8 mA
1.65
2.3
1.2
1.9
2.2
2.3
3.8
−
−
−
−
−
VI = VIH or VIL; IO = −12 mA 2.7
VI = VIH or VIL; IO = −24 mA 3.0
VI = VIH or VIL; IO = −32 mA 4.5
−
−
−
−
−
−
ILI
input leakage
current
VI = 5.5 V or GND
3.6
±0.1
±5
Ioff
ICC
power OFF leakage VI or VO = 5.5 V
current
0
−
−
±0.1
±10
µA
µA
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
0.1
10
Note
1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
2001 Apr 06
5
NXP [ NXP ]
