NXP Semiconductors
1PS70SB15
Dual Schottky barrier diode
Symbol
T
stg
Parameter
storage temperature
Conditions
Min
-65
Max
150
Unit
°C
9. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
[1]
Thermal characteristics
Parameter
Conditions
in free air
Min
-
Typ
-
Max
625
Unit
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
10. Characteristics
Table 7.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA; T
amb
= 25 °C
I
F
= 1 mA; T
amb
= 25 °C
I
F
= 10 mA; T
amb
= 25 °C
I
F
= 30 mA; T
amb
= 25 °C
I
F
= 100 mA; T
amb
= 25 °C
I
R
C
d
reverse current
diode capacitance
V
R
= 25 V; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C
-
-
10
pF
-
-
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
2
mV
mV
mV
mV
mV
µA
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
1PS70SB15
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© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
3/9
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