NXP Semiconductors
1PS70SB15
Dual Schottky barrier diode
10
3
I
F
(mA)
10
2
(1)
006aac829
(3)
(2)
10
3
I
R
(µA)
10
2
(2)
(1)
aaa-004515
10
10
(1)
(2)
(3)
1
1
(3)
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
10
-1
0
10
20
V
R
(V)
30
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
10
C
d
(pF)
8
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
006aac891
6
4
2
0
0
10
20
V
R
(V)
30
T
amb
= 25 °C; f = 1 MHz
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
1PS70SB15
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
4/9
PHILIPS [ NXP SEMICONDUCTORS ]
