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NXH25C120L2C2SG 参数 Datasheet PDF下载

NXH25C120L2C2SG图片预览
型号: NXH25C120L2C2SG
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT Module, CIB 1200 V, 25 A IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 10 页 / 372 K
品牌: ONSEMI [ ONSEMI ]
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NXH25C120L2C2SG  
TYPICAL CHARACTERISTICS INVERTER/BRAKE IGBT & DIODE  
6
2
1.8  
1.6  
1.4  
1.2  
1
°
°
V
V
R
= 600 V  
= 15 V/15 V  
= 20 W  
V
V
I
= 600 V  
= 15 V/15 V  
= 25 A  
25 C  
25 C  
CE  
CE  
°
°
GE  
150 C  
GE  
125 C  
5
4
3
2
1
0
G
C
0.8  
0.6  
0.4  
0.2  
0
0
5
10  
15  
20  
25  
If (A)  
30  
35  
40  
45  
50  
0
20  
40  
60  
80  
100  
Rg (W)  
Figure 8. Inverter Diode Typical Reverse  
Recovery Energy vs IC  
Figure 9. Inverter IGBT Typical Turn On Loss vs RG  
1.6  
4.5  
4
°
°
V
V
I
= 600 V  
= 15 V/15 V  
= 25 A  
V
V
= 600 V  
= 15 V/15 V  
25 C  
25 C  
CE  
CE  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
°
°
GE  
125 C  
GE  
125 C  
I = 25 A  
C
C
3.5  
3
2.5  
2
1.5  
1.0  
0.5  
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
Rg (W)  
Rg (W)  
Figure 10. Inverter IGBT Typical Turn Off Loss vs RG  
Figure 11. Inverter Diode Typical Reverse  
Recovery Energy vs RG  
18  
V
V
= 600 V  
= 15 V  
= 25 A  
CE  
GE  
15  
12  
9
I
C
6
3
0
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
Charge (nC)  
Figure 12. Inverter IGBT Gate Voltage vs Gate Charge  
www.onsemi.com  
6
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