NXH25C120L2C2SG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
1.7
1.9
5.9
–
250
2.4
–
mA
GE
GE
GE
GE
GE
CE
V
V
V
= 15 V, I = 25 A, T = 25°C
CE(sat)
C
J
= 15 V, I = 25 A, T = 150°C
–
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
= V , I = 3.04 mA
4.8
–
6.8
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25 °C
t
–
68
J
d(on)
V
V
= 600 V, I = 25 A
CE
GE
C
t
r
–
63
–
=
15 V, R = 20 W
G
Turn−off Delay Time
Fall Time
t
–
235
48
–
d(off)
t
f
–
–
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
–
2200
720
72
–
on
off
E
–
–
T = 125°C
ns
t
t
–
–
J
d(on)
V
CE
GE
= 600 V, I = 25 A
C
t
–
56
–
r
V
=
15 V, R = 20 W
G
Turn−off Delay Time
Fall Time
–
266
54
–
d(off)
t
–
–
f
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
E
–
3050
1200
6200
212
117
269
–
on
off
–
–
V
= 20 V. V = 0 V
pF
C
–
–
CE
GE
ies
oes
f = 100 kHz
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
V
GE
= 600 V, I = 25 A,
Q
g
–
–
nC
C
= 0 V ~ +15 V
Temperature under switching conditions
Thermal Resistance − chip−to−case
DIODE CHARACTERISTICS
Tvj op
RthJC
−40
150
–
°C
–
0.54
°C/W
Brake Diode Reverse Leakage Current
Diode Forward Voltage
VR = 1200 V
IR
–
–
–
1.9
1.7
1.35
16
200
2.6
–
mA
V
F
V
I = 25 A, T = 25°C
F
J
I = 25 A, T = 150°C
–
F
J
T = 25°C
Reverse Recovery Charge
Q
–
–
mC
A
J
rr
V
V
= 600 V, I = 25 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
I
I
–
–
RRM
=
15 V, R = 20 W
G
E
rr
–
350
3.6
26
–
mJ
mC
A
T = 150 °C
Reverse Recovery Charge
Q
rr
RRM
–
–
J
V
V
= 600 V, I = 25 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
–
–
=
15 V, R = 20 W
G
E
rr
–
1050
–
mJ
°C
Temperature under switching conditions
Thermal Resistance − chip−to−case
Tvj op
RthJC
−40
–
150
–
1.10
°C/W
www.onsemi.com
3