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NXH25C120L2C2SG 参数 Datasheet PDF下载

NXH25C120L2C2SG图片预览
型号: NXH25C120L2C2SG
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT Module, CIB 1200 V, 25 A IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 10 页 / 372 K
品牌: ONSEMI [ ONSEMI ]
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NXH25C120L2C2SG  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
IGBT CHARACTERISTICS  
CollectorEmitter Cutoff Current  
CollectorEmitter Saturation Voltage  
V
V
V
V
V
= 0 V, V = 1200 V  
I
CES  
1.7  
1.9  
5.9  
250  
2.4  
mA  
GE  
GE  
GE  
GE  
GE  
CE  
V
V
V
= 15 V, I = 25 A, T = 25°C  
CE(sat)  
C
J
= 15 V, I = 25 A, T = 150°C  
C
J
GateEmitter Threshold Voltage  
Gate Leakage Current  
Turnon Delay Time  
Rise Time  
= V , I = 3.04 mA  
4.8  
6.8  
400  
V
CE  
C
GE(TH)  
= 20 V, V = 0 V  
I
nA  
ns  
CE  
GES  
T = 25 °C  
t
68  
J
d(on)  
V
V
= 600 V, I = 25 A  
CE  
GE  
C
t
r
63  
=
15 V, R = 20 W  
G
Turnoff Delay Time  
Fall Time  
t
235  
48  
d(off)  
t
f
mJ  
Turnon Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
Turnon Delay Time  
Rise Time  
E
2200  
720  
72  
on  
off  
E
T = 125°C  
ns  
t
t
J
d(on)  
V
CE  
GE  
= 600 V, I = 25 A  
C
t
56  
r
V
=
15 V, R = 20 W  
G
Turnoff Delay Time  
Fall Time  
266  
54  
d(off)  
t
f
mJ  
Turnon Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
Input Capacitance  
E
E
3050  
1200  
6200  
212  
117  
269  
on  
off  
V
= 20 V. V = 0 V  
pF  
C
CE  
GE  
ies  
oes  
f = 100 kHz  
Output Capacitance  
C
Reverse Transfer Capacitance  
Total Gate Charge  
C
res  
V
CE  
V
GE  
= 600 V, I = 25 A,  
Q
g
nC  
C
= 0 V ~ +15 V  
Temperature under switching conditions  
Thermal Resistance chiptocase  
DIODE CHARACTERISTICS  
Tvj op  
RthJC  
40  
150  
°C  
0.54  
°C/W  
Brake Diode Reverse Leakage Current  
Diode Forward Voltage  
VR = 1200 V  
IR  
1.9  
1.7  
1.35  
16  
200  
2.6  
mA  
V
F
V
I = 25 A, T = 25°C  
F
J
I = 25 A, T = 150°C  
F
J
T = 25°C  
Reverse Recovery Charge  
Q
mC  
A
J
rr  
V
V
= 600 V, I = 25 A  
CE  
GE  
C
Peak Reverse Recovery Current  
Reverse Recovery Energy  
I
I
RRM  
=
15 V, R = 20 W  
G
E
rr  
350  
3.6  
26  
mJ  
mC  
A
T = 150 °C  
Reverse Recovery Charge  
Q
rr  
RRM  
J
V
V
= 600 V, I = 25 A  
CE  
GE  
C
Peak Reverse Recovery Current  
Reverse Recovery Energy  
=
15 V, R = 20 W  
G
E
rr  
1050  
mJ  
°C  
Temperature under switching conditions  
Thermal Resistance chiptocase  
Tvj op  
RthJC  
40  
150  
1.10  
°C/W  
www.onsemi.com  
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