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NXH25C120L2C2SG 参数 Datasheet PDF下载

NXH25C120L2C2SG图片预览
型号: NXH25C120L2C2SG
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT Module, CIB 1200 V, 25 A IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 10 页 / 372 K
品牌: ONSEMI [ ONSEMI ]
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NXH25C120L2C2SG  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
RECTIFIER DIODE CHARACTERISTICS  
Rectifier Reverse Leakage Current  
Rectifier Forward Voltage  
VR = 1600 V  
I = 25 A, T = 25°C  
IR  
1
200  
1.5  
mA  
V
F
V
F
J
I = 35 A, T = 150°C  
1.1  
F
J
Temperature under switching conditions  
Tvj op  
RthJC  
40  
150  
°C  
Thermal Resistance chiptocase  
THERMISTOR CHARACTERISTICS  
Nominal resistance  
Nominal resistance  
Deviation of R25  
0.86  
°C/W  
T = 25°C  
R
5
493.3  
5
kW  
W
25  
T = 100°C  
R
100  
nR/R  
5  
%
Power dissipation  
P
D
20  
mW  
mW/K  
K
Power dissipation constant  
Bvalue  
1.4  
B(25/50), tolerance 2%  
B(25/100), tolerance 2%  
3375  
3433  
Bvalue  
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
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