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NXH25C120L2C2SG 参数 Datasheet PDF下载

NXH25C120L2C2SG图片预览
型号: NXH25C120L2C2SG
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT Module, CIB 1200 V, 25 A IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 10 页 / 372 K
品牌: ONSEMI [ ONSEMI ]
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NXH25C120L2C2SG  
TYPICAL CHARACTERISTICS INVERTER/BRAKE IGBT & DIODE  
75  
75  
60  
45  
30  
15  
0
°
150 C  
°
25 C  
60  
V
GE  
= 20 V  
45  
30  
15  
0
V
GE  
= 20 V  
V
GE  
= 11 V  
V
GE  
= 11 V  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
V
, COLLECTOREMITTER VOLTAGE (V)  
V
, COLLECTOREMITTER VOLTAGE (V)  
CE  
CE  
Figure 2. Inverter IGBT Typical Output  
Figure 3. Inverter IGBT Typical Output  
Characteristic (255C)  
Characteristic (1505C)  
70  
60  
50  
40  
30  
20  
10  
0
75  
60  
45  
30  
15  
0
°
150 C  
°
150 C  
°
25 C  
°
25 C  
0
2
4
6
8
10  
12  
0
0.5  
1
1.5  
2
2.5  
3
V
, GateEmitter Voltage (V)  
V , Forward Voltage (V)  
F
GE  
Figure 4. Inverter IGBT Typical Transfer  
Characteristic  
Figure 5. Inverter Diode Typical Forward  
Characteristic  
3
8
7
6
5
4
3
2
1
0
°
°
V
V
R
= 600 V  
= 15 V/15 V  
= 20 W  
V
V
R
= 600 V  
= 15 V/15 V  
= 20 W  
25 C  
25 C  
CE  
CE  
°
°
GE  
150 C  
GE  
150 C  
2.5  
G
G
2
1.5  
1
0.5  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
25  
Ic (A)  
30  
35  
40  
45  
50  
Ic (A)  
Figure 6. Inverter IGBT Typical Turn On Loss vs IC  
Figure 7. Inverter IGBT Typical Turn Off Loss vs IC  
www.onsemi.com  
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