MC54/74HC390
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to + 7.0
CC
V
– 1.5 to V
+ 1.5
V
in
CC
V
out
– 0.5 to V
+ 0.5
V
CC
I
± 20
mA
mA
mA
mW
in
cuit. For proper operation, V and
in
I
DC Output Current, per Pin
± 25
± 50
out
V
should be constrained to the
out
I
DC Supply Current, V and GND Pins
CC
CC
range GND (V or V
)
V
CC
.
in out
P
D
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V ).
Unused outputs must be left open.
CC
T
Storage Temperature
– 65 to + 150
C
C
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic or SOIC DIP)
L
260
300
(Ceramic DIP)
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
Ceramic DIP: – 10 mW/ C from 100 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
2.0
0
Max
Unit
V
V
CC
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
6.0
V , V
in out
V
CC
V
T
A
– 55 + 125
C
t , t
r f
Input Rise and Fall Time
(Figure 1)
V
CC
V
CC
V
CC
= 2.0 V
= 4.5 V
= 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
– 55 to
V
CC
V
Symbol
Parameter
Test Conditions
25 C
Unit
85 C
125 C
V
IH
Minimum High–Level Input
Voltage
V
= 0.1 V or V
– 0.1 V
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
out
CC
|I
|
20 µA
out
V
Maximum Low–Level Input
Voltage
V
= 0.1 V or V
– 0.1 V
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
IL
out
CC
|I
|
20 µA
out
V
|I
= V or V
IH IL
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
OH
Minimum High–Level Output
Voltage
in
out
|
20 µA
V
in
= V or V
|I
|I
|
|
4.0 mA
5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
IH
IL out
out
V
|I
= V or V
IH
out
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
OL
Maximum Low–Level Output
Voltage
V
in
IL
|
20 µA
V
= V or V
|I
|I
|
|
4.0 mA
5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
in
in
IH IL out
out
I
Maximum Input Leakage Current
V
V
= V
= V
or GND
6.0
6.0
± 0.1
± 1.0
± 1.0
µA
µA
in
CC
I
Maximum Quiescent Supply
Current (per Package)
or GND
8
80
160
CC
in
CC
I
= 0 µA
out
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
2
High–Speed CMOS Logic Data
DL129 — Rev 6
ONSEMI [ ONSEMI ]
