Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = 8 A
Ciss
VDD = 25 V
8
VDD = 50 V
Coss
6
VDD = 75 V
4
2
0
f = 1 MHz
= 0 V
Crss
V
GS
0
3
6
9
12
15
0.1
1
10
100
150
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
40
30
20
10
0
50
TJ = 25 oC
VGS = 10 V
10
TJ = 100 o
C
VGS = 6 V
TJ = 125 o
C
RθJC = 2 oC/W
1
0.001
0.01
0.1
1
10 30
25
50
75
100
125
Tc, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
100
10
1
10000
SINGLE PULSE
RθJC = 2 oC/W
TC = 25 oC
100 µs
1000
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
1 ms
RθJC = 2 oC/W
TC = 25 oC
100
50
10 ms
DC
0.1
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
4
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FDD86102 Rev.1.9
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